MT61K256M32JE-14:A

GDDR6

MT61K256M32JE-14:A

DRAM GDDR6

MICRON/美光

8Gb

256Mx32

1.31V~1.39V

0°C~95°C

TFBGA-180

EOL

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K4Z80325BC-HC14

GDDR6

K4Z80325BC-HC14

DRAM GDDR6

SAMSUNG/三星

8Gb

256Mx32

14.0 Gbps

FBGA-180

Mass Production

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K4Z80325BC-HC16

GDDR6

K4Z80325BC-HC16

GDDR6

SAMSUNG三星

8 Gb

256M x 32

16.0 Gbps

180 FBGA

EOL

16K / 32 ms

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MT61K512M32KPA-14:B TR

GDDR6

MT61K512M32KPA-14:B TR

GDDR6

美光

16G

512MX32

FBGA

动态随机存取存储器 GDDR6 16G 512MX32 FBGA DDP 制造商 美光-Micron

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K4ZAF325BC-SC16

GDDR6

K4ZAF325BC-SC16

GDDR6

SAMSUNG三星

16 Gb

512M x 32

16.0 Gbps

180 FBGA

Mass Production

16K / 32 ms

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K4ZAF325BC-SC20

GDDR6

K4ZAF325BC-SC20

GDDR6

SAMSUNG三星

16 Gb

512M x 32

20.0 Gbps

180 FBGA

Mass Production

16K / 32 ms

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K4ZAF325BM-HC14

GDDR6

K4ZAF325BM-HC14

GDDR6

SAMSUNG三星

16 Gb

512M x 32

14.0 Gbps

180 FBGA

EOL

16K / 32 ms

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K4ZAF325BM-HC18

GDDR6

K4ZAF325BM-HC18

GDDR6

SAMSUNG/三星

16 Gb

512M x 32

18.0 Gbps

180 FBGA

EOL

16K / 32 ms

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H56G42AS4DX014N

GDDR6

H56G42AS4DX014

GDDR6

海力士

16Gb

1.35V / 1.35V

DDR 8.0GHz

FCBGA

CS

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H56G42AS6DX014N

GDDR6

H56G42AS6DX014N

GDDR6

SK HYNIX/海力士

16Gb

1.35V / 1.35V

FCBGA

DDR 9.0GHz

CS

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MT61K512M32KPA-16:C

GDDR6

MT61K512M32KPA-16:C

GDDR6

Micron美光

16Gb

512M x32

2GHz

0C to +95C

180-ball

End of Life

16GTPS

COMPONENT

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MT61K512M32KPA-16:C

GDDR6

MT61K512M32KPA-16:C

GDDR6

Micron美光

16Gb

512M x32

2GHz

0C to +95C

180-ball

End of Life

16GTPS

COMPONENT

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MT61K512M32KPA-16:C

GDDR6

MT61K512M32KPA-16:C

GDDR6

Micron美光

16Gb

512M x32

2GHz

0C to +95C

180-ball

End of Life

16GTPS

COMPONENT

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H56G42AS4DX014N

GDDR6

H56G42AS4DX014N

GDDR6

SKHYNIX海力士

16Gb

DDR 8.0GHz

1.35V / 1.35V

FCBGA

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MT46H32M16LFBF-5 IT:C

LPDDR

MT46H32M16LFBF-5 IT:C

LPDDR

MICRON/美光

D9LQQ

512Mb

Production

Width: x16

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MT46H32M32LFB5-5 IT:B TR

LPDDR

MT46H32M32LFB5-5 IT:B TR

DRAM LPDDR

MICRON/美光

1Gb

32Mx32

1.7V~1.95V

-40℃~85℃

VFBGA-90

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MT46H32M16LFBF-5 IT:C TR

LPDDR

MT46H32M16LFBF-5 IT:C TR

DRAM LPDDR

MICRON/美光

512Mb

32Mx16

1.7V~1.95V

-40℃~85℃

VFBGA-60

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K4EBE304EB-EGCF

LPDDR3

K4EBE304EB-EGCF

DRAM LPDDR3

SAMSUNG/三星

32Gb

x32

1866Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

Mass Production

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K4EBE304EC-EGCF

LPDDR3

K4EBE304EC-EGCF

DRAM LPDDR3

SAMSUNG/三星

32Gb

x32

2133Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

Mass Production

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K3QF4F40BM-AGCF

LPDDR3

K3QF4F40BM-AGCF

DRAM LPDDR3

SAMSUNG/三星

32Gb

x64

1866Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-253

Mass Production

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