PRN256M8V89CG8GQF-15E

DDR3

PRN256M8V89CG8GQF-15E

DRAM DDR3

SPECTEK

2GB

-0.4V~1.975V

0℃~95℃

FBGA-96

8mm×10.5mm

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H5TQ4G83EFR-RDC

DDR3

H5TQ4G83EFR-RDC

DRAM DDR3

SK HYNIX/海力士

4Gb

x8

1866Mbps

-0.4V~1.80V

0℃~85℃

FBGA-78

Mass Production

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H5TC4G83BFR-PBA

DDR3

H5TC4G83BFR-PBA

DRAM DDR3

SK HYNIX/海力士

4Gb

x8

1600Mbps

-0.4V~1.80V

0°C~85°C

FBGA-78

Mass Production

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MT41K512M16HA-125:A

DDR3L

MT41K512M16HA-125:A

DRAM DDR3L

MICRON/美光

8G

512Mx16

1600Mbps

1.35V

0°C~85°C

FBGA-96

Production

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MT41K256M8DA-125:K

DDR3L

MT41K256M8DA-125:K

DRAM DDR3L

MICRON/美光

2Gb

x8

1600 MT/s

1.35V

0°C~95°C

FBGA-78

8mm×10.5mm×1.2mm

FBGA CodeD9PSH

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MT41K128M16JT-125:K

DDR3L

MT41K128M16JT-125:K

DRAM DDR3L

MICRON/美光

2Gb

x16

1600 MT/s

1.35V

0°C~95°C

FBGA-96

8mm×14mm×1.2mm

D9PTK

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H5TC2G83GFR-PBA

DDR3L

H5TC2G83GFR-PBA

DRAM DDR3L

SK HYNIX/海力士

2Gb

x8

1866Mbps

1.283V~1.45V

0℃~85℃

FBGA-78

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H5TQ4G63EFR-RDI

DDR3L

H5TQ4G63EFR-RDI

DRAM DDR3L

SK HYNIX/海力士

4Gb

x16

1866Mbps

1.283V~1.45V

-40℃~85℃

FBGA-96

Mass Production

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H5AN4G6NBJR-UHI

DDR4

H5AN4G6NBJR-UHI

DRAM DDR4

SK HYNIX/海力士

4G

256Mx16

2400Mbps

1.2V

-40°C~95°C

FBGA-96

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H5ANAG6NDMR-VKC

DDR4

H5ANAG6NDMR-VKC

DRAM DDR4

SK HYNIX/海力士

16Gb

x16

2666Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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H5ANAG6NCJR-XNC

DDR4

H5ANAG6NCJR-XNC

DDR4

SK hynix/海力士

16Gb

x16

3200Mbps

FCBGA

MP

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H5ANBG6NAMR-VKC

DDR4

H5ANBG6NAMR-VKC

DDR4

SK hynix/海力士

32Gb

x16

2666Mbps

FBGA

MP

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K4ABG165WA-MCTD

DDR4

K4ABG165WA-MCTD

DRAM DDR4

SAMSUNG/三星

32Gb

2Gx16

2666Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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K4ABG165WA-MCWE

DDR4

K4ABG165WA-MCWE

DRAM DDR4

SAMSUNG/三星

32Gb

2Gx16

3200Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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K4A4G165WF-BCTD

DDR4

K4A4G165WF-BCTD

DRAM DDR4

SAMSUNG/三星

4Gb

256Mx16

2666Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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MT40A256M16LY-062E IT:F

DDR4

MT40A256M16LY-062E IT:F

DDR4

MICRON/美光

4Gb

256M x16

1600MHz

1.2V

-40C to +95C

96-ball TFBGA

Production

3200MTPS

CL = 22

DDR4 4G X16 TFBGA

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MT40A512M16LY-062E:E

DDR4

MT40A512M16LY-062E:E

DDR4

MICRON/美光

8Gb

512M x16

1600MHz

1.2V

0C to +95C

96-ball TFBGA

Production

3200MTPS

CL = 22

DDR4 8G X16 TFBGA

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MT40A1G16KD-062E IT:E

DDR4

MT40A1G16KD-062E IT:E

DDR4

MICRON/美光

16Gb

-40C to +95C

D8BHW

Production

Width:x16

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MT40A1G16TB-062E:F

DDR4

MT40A1G16TB-062E:F

DDR4

MICRON/美光

16Gb

1G x16

1600MHz

1.2V

0C to +95C

96-ball TFBGA

Production

3200MTPS

CL = 22

DDR4 16G X16 TFBGA

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K4ABG165WB-MCWE

DDR4

K4ABG165WB-MCWE

DRAM DDR4

SAMSUNG/三星

32Gb

2Gx16

3200Mbps

1.2V

0°C~85°C

FBGA-96

Mass Production

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