For more detailed information, pleaseContact Us ;
model
specification
DRAM type
capacity
framework
speed
working voltage
operation temperature
product details
H58G56AK6BX069N
LPDDR5
SK hynix/海力士
4GB
315Ball
Click view
H58G78BK8BX114N
LPDDR5X
16GB
H9AG8GDMNBX113
LPDDR4X
3GB
CS
eMMC5.1
32GB
H9AG9GEANBX101
6GB
MP
64GB
H9QT1GGCN6X147
DDR4
H9QT2GGMN6X200
H56G42AS6DX014N
GDDR6
SK HYNIX/海力士
16Gb
1.35V / 1.35V
FCBGA
DDR 9.0GHz
K3KLALA0CM-MGCT
SAMSUNG/三星
128 Gb
x32
7500 Mbps
1.8 / 1.05 / 0.9 / 0.5 V
-25 ~ 85 °C
315 FBGA
Mass Production
HN8T15DEHKX075N
UFS
SKHYNIX/海力士
BGA
H9QG9GECN6X203N
uMCP
64+6GB
H9QT0GEEN6X202N
128+6GB
H9QT0G6CN6X146R
128+8GB
H9QT1GGCN6X147R
256+12GB
H9RT2G7M75X068N
512+16GB
H58GG6AK9HX094N
12GB
496ball
H58GU6MK6HX042N
18GB
Copyright (C) Since 2024 Shenzhen Xunfenda Electronic Technology Co., Ltd. All rights reserved 粤ICP备2021091299号-1
: 粤公网安备 粤公网安备44030402004852号