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model
specification
DRAM type
capacity
framework
speed
working voltage
operation temperature
product details
HN8T15DEHKX075N
UFS
SKHYNIX/海力士
BGA
Click view
K3KLALA0CM-MGCT
LPDDR5X
SAMSUNG/三星
128 Gb
x32
7500 Mbps
1.8 / 1.05 / 0.9 / 0.5 V
-25 ~ 85 °C
315 FBGA
Mass Production
H56G42AS6DX014N
GDDR6
SK HYNIX/海力士
16Gb
1.35V / 1.35V
FCBGA
DDR 9.0GHz
CS
K4ZAF325BM-HC18
16 Gb
512M x 32
18.0 Gbps
180 FBGA
EOL
16K / 32 ms
K4ZAF325BM-HC14
SAMSUNG三星
14.0 Gbps
K4ZAF325BC-SC20
20.0 Gbps
K4ZAF325BC-SC16
16.0 Gbps
K4Z80325BC-HC16
8 Gb
256M x 32
K4G80325FC-HC25000
GDDR5
8.0 Gbps
170 FBGA
K4G80325FC-HC25TSO
三星
K3LKBKB0BM-MGCP
LPDDR5
32 Gb
6400 Mbps
K3LKCKC0BM-MGCP
64 Gb
K3KL9L90DM-MGCU
8533 Mbps
-40 ~ 95 °C
Sample
K3KL8L80DM-MUCU
-40 ~ 125 °C
K3KLALA0DM-MFCU
KHBBC4B03B-MC1JT00
HBM
36GB
HBM3E-8.0Gbps
KHBB84A03B-MC1JT00
24GB
KHBAC4A03D-MC1HT00
24Gb
HBM3-6.4Gbps
KHBA84A03D-MC1HT00
KHAA84901B-JC17T00
HBM2E-3.6Gbps
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