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model
specification
DRAM type
capacity
framework
speed
working voltage
operation temperature
product details
KHA884901X-MC13TNX
HBM
SAMSUNG/三星
8Gb
HBM2-2.4Gbps
Click view
KHA884901X-MC12TIF
HBM2-2.0Gbps
K3QF3F30BM-AGCF
LPDDR3
16 Gb
x64
1866 Mbps
1.8 / 1.2 / 1.2 V
-25 ~ 85 °C
253 FBGA
EOL
K3UH5H50MM-NGCJ
LPDDR4X
32Gb
3733 Mbps
1.8 / 1.1 / 0.6 V
366FBGA
Mass Production
K4U8E3S4AD-CHCL
8 Gb
x32
4266 Mbps
-40 ~ 105 °C
200FBGA
四代超低功耗双倍数据率同步动态随机存储器
K4E8E324EB-EGCG
2133 Mbps
178FBGA
批量生产
三代低功耗双倍数据率同步动态随机存储器
KLMCG2UCTB-B041T02
eMMC 5.1
64 GB
1.8 / 3.3 V
11.5 x 13 x 0.8 mm
HS400
K3QF6F60AM-FGCF
24Gb
256FBGA
K4U6E3S4AB-MGCL
200 FBGA
K4A8G165WC-BCTD
DDR4
512M x 16
2666 Mbps
1.2 V
0 ~ 85 °C
96 FBGA
KMGX6001BA-B514009
221 FBGA
32 GB
24 Gb
多芯片封装
K4UBE3D4AM-GHCL
K3KL9L90CM-MGCT
64 Gb
7500 Mbps
1.8 / 1.05 / 0.9 / 0.5 V
315 FBGA
K3KL8L80CM-MGCT
32 Gb
K3LK7K70BM-BGCP
LPDDR5
6400 Mbps
496 FBGA
K4E6E304EC-EGCF
DRAM LPDDR3
16Gb
512Mx32
1866Mbps
1.8V/1.2V
-25°C~85°C
FBGA-178
K4E8E324EB-AGCF
256Mx32
FBGA-168
K9F2G08U0D-SIB0
FLASH
2G
256Mx8
2.7v~3.6v
-40°C~85°C
TS0P-48
MZQLB3T8HALS-00003
SSD
3.84TB
KLMBG4GESD-B02P
eMMC
32GB
BGA
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