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model
specification
DRAM type
capacity
framework
speed
working voltage
operation temperature
product details
K4B2G1646F-BCNB
DRAM DDR3
SAMSUNG/三星
2Gb
128Mx16
2133 Mbps
1.5V
0°C~85°C
FBGA-96
Mass Production
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K4B2G1646F-BCMA
1866 Mbps
K4B2G0846F-BYMA
256Mx8
1866Mbps
1.35V
FBGA-78
K4B1G1646I-BYK0
1Gb
64Mx16
1600Mbps
K4T1G164QJ-BFF8
DRAM DDR2
1066Mbps
1.8V
-40°C~95°C
FBGA-84
EOL
K4T1G084QJ
128Mx8
FBGA-60
K4FHE3D4HM-MHCJ
DRAM LPDDR4
24Gb
x32
3733Mbps
1.8/1.1/1.1V
-40℃~105℃
FBGA-200
K4B2G0846F-BCMA
K4F8E3S4HD-MGCL
8Gb
4266Mbps
-25°C~85°C
K4E8E324EB-EGCG
2133Mbps
1.8/1.2/1.2V
FBGA-178
K4A4G165WE-BCWE
DRAM DDR4
4Gb
256M x 16
3200 Mbps
1.2V
K4UBE3D4AB-MGCL
DRAM LPDDR4X
32Gb
1.8/1.1/0.6V
K4UBE3D4AA-MGCL
2000/REEL
K4U6E3S4AA-MGCR
16Gb
KLMAG1JETD-B041
eMMC
16GB
1.8~3.3V
FBGA-153
1120/TRAY
11.5mm*13mm*0.8mm
5.1
HS400
KLM8G1GETF-B041
8GB
KLMBG2JETD-B041
32GB
1.8/3.3V
BGA-153
11.5mm x 13mm x 0.8mm
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