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model
specification
DRAM type
capacity
framework
speed
working voltage
operation temperature
product details
K4A4G165WF-BCTD
DRAM DDR4
SAMSUNG/三星
4Gb
256Mx16
2666Mbps
1.2V
0°C~85°C
FBGA-96
Mass Production
Click view
K4B4G1646E-BCNB
DRAM DDR3
512Mx8
2133Mbps
1.5V
K4B4G1646E-BYMA
1866Mbps
1.35V
K4ZAF325BM-HC16
DRAM GDDR6
16Gb
512Mx32
16.0Gbps
FBGA-180
EOL
KLMDG4UCTB-B041
eMMC
128GB
1.8/3.3V
-25°C~85°C
BGA
11.5mm x 13mm x 1.0mm
5.1
HS400
K4ABG165WB-MCWE
32Gb
2Gx16
3200Mbps
K4ABG085WA-MCTD
4Gx8
FBGA-78
K4AAG165WB-MCTD
1Gx16
K4AAG165WB-BCWE
4Gx4
K4AAG165WA-BIWE
-40°C~95°C
KLUDG8J1ZD-C0CP
UFS
11.5mm x 13mm x 1.2mm
2.1
G3 2Lane
KLUDG8J1ZD-C0CQ
-40℃~105℃
KLUCG4J1ZD-C0CP
KLUCG4J1ZD-C0CQ
32GB
KLMCG4JEUD-B04P
64GB
-40℃~85℃
KLMBG4GEUF-B04Q
11.5mm x 13mm x 0.8mm
KLM8G1GEUF-B04Q
8GB
K4UJE3Q4AA-TFCL
DRAM LPDDR4X
48Gb
x32
4266Mbps
1.8/1.1/0.6V
FBGA-200
K4UJE3Q4AA-THCL
K4UBE3D4AM-TFCL
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