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model

specification

brand

DRAM type

capacity

framework

speed

working voltage

operation temperature

product details

K3UH5H50AM-JGCR

LPDDR4X

K3UH5H50AM-JGCR

DRAM LPDDR4X

SAMSUNG/三星

32Gb

x64

4266Mbps

1.8/1.1/0.6V

-25°C~85°C

FBGA-432

Mass Production

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K3UH5H5OMM-AGCJ

LPDDR4X

K3UH5H5OMM-AGCJ

DRAM LPDDR4X

SAMSUNG/三星

32Gb

x64

3733Mbps

1.8/1.1/0.6V

-25°C~85°C

FBGA-556

Mass Production

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K4UJE3Q4AA-TFCL

LPDDR4X

K4UJE3Q4AA-TFCL

DRAM LPDDR4X

SAMSUNG/三星

48Gb

x32

4266Mbps

1.8/1.1/0.6V

-40°C~95°C

FBGA-200

Mass Production

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K4UJE3Q4AA-THCL

LPDDR4X

K4UJE3Q4AA-THCL

DRAM LPDDR4X

SAMSUNG/三星

48Gb

x32

4266Mbps

1.8/1.1/0.6V

-40℃~105℃

FBGA-200

Mass Production

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K4UBE3D4AM-TFCL

LPDDR4X

K4UBE3D4AM-TFCL

DRAM LPDDR4X

SAMSUNG/三星

32Gb

x32

4266Mbps

1.8/1.1/0.6V

-40°C~95°C

FBGA-200

Mass Production

Click view

K4UBE3D4AM-THCL

LPDDR4X

K4UBE3D4AM-THCL

DRAM LPDDR4X

SAMSUNG/三星

32Gb

x32

4266Mbps

1.8/1.1/0.6V

-40℃~105℃

FBGA-200

Mass Production

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K4UCE3Q4AA-MGCL

LPDDR4X

K4UCE3Q4AA-MGCL

DRAM LPDDR4X

SAMSUNG/三星

64Gb

x32

4266Mbps

1.8/1.1/0.6V

-25°C~85°C

FBGA-200

Mass Production

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K4UCE3Q4AA-MGCR

LPDDR4X

K4UCE3Q4AA-MGCR

DRAM LPDDR4X

SAMSUNG/三星

64GB

x32

4266Mbps

1.8/1.1/0.6V

-25°C~85°C

FBGA-200

Sample

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K4UBE3D4AA-MGCR

LPDDR4X

K4UBE3D4AA-MGCR

DRAM LPDDR4X

SAMSUNG/三星

32Gb

x32

4266Mbps

1.8/1.1/0.6V

-25°C~85°C

FBGA-200

Sample

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K4U6E3S4AA-MGCL

LPDDR4X

K4U6E3S4AA-MGCL

DRAM LPDDR4X

SAMSUNG/三星

16Gb

x32

4266Mbps

1.8/1.1/0.6V

-25°C~85°C

FBGA-200

Mass Production

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K3UH7H70AM-JGCR

LPDDR4X

K3UH7H70AM-JGCR

DRAM LPDDR4X

SAMSUNG/三星

64Gb

x64

4266Mbps

1.8/1.1/0.6V

-25°C~85°C

FBGA-432

Sample

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K4U8E3S4AD-GFCL

LPDDR4X

K4U8E3S4AD-GFCL

DRAM LPDDR4X

SAMSUNG/三星

8Gb

x32

4266Mbps

1.8/1.1/0.6V

-40°C~95°C

FBGA-200

Mass Production

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K3UH7H70MM-NGCJ

LPDDR4X

K3UH7H70MM-NGCJ

DRAM LPDDR4X

SAMSUNG/三星

64 GB

x64

3733Mbps

1.8/1.1/0.6V

-25°C~85°C

FBGA-366

Mass Production

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H9AG8GDMNBX113

LPDDR4X

H9AG8GDMNBX113

LPDDR4X

SK hynix/海力士

3GB

CS

eMMC5.1

32GB

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H9AG9GEANBX101

LPDDR4X

H9AG9GEANBX101

LPDDR4X

SK hynix/海力士

6GB

MP

eMMC5.1

64GB

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K4UBE3D4AB-MGCL

LPDDR4X

K4UBE3D4AB-MGCL

DRAM LPDDR4X

SAMSUNG/三星

32Gb

x32

4266Mbps

1.8/1.1/0.6V

-25°C~85°C

FBGA-200

Mass Production

Click view

K4UBE3D4AA-MGCL

LPDDR4X

K4UBE3D4AA-MGCL

DRAM LPDDR4X

SAMSUNG/三星

32Gb

x32

4266Mbps

1.8/1.1/0.6V

-25°C~85°C

FBGA-200

Mass Production

2000/REEL

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K4U6E3S4AA-MGCR

LPDDR4X

K4U6E3S4AA-MGCR

DRAM LPDDR4X

SAMSUNG/三星

16Gb

x32

4266Mbps

1.8/1.1/0.6V

-25°C~85°C

FBGA-200

Mass Production

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H9HKNNNFBMAVAR-NEH

LPDDR4X

H9HKNNNFBMAVAR-NEH

DRAM LPDDR4X

SK HYNIX/海力士

8GB

x16

4266Mbps

1.8V/1.1V/0.6V

-30℃~105℃

BGA-556

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H9HCNNNCPUMLXR-NEE

LPDDR4X

H9HCNNNCPUMLXR-NEE

DRAM LPDDR4X

SK HYNIX/海力士

4GB

x16

4266Mbps

1.8V/1.1V/1.1V

-25℃~85℃

BGA-200

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