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model
specification
DRAM type
capacity
framework
speed
working voltage
operation temperature
product details
H5ANAG6NCJR-XNC
DDR4
SK hynix/海力士
16Gb
x16
3200Mbps
FCBGA
MP
Click view
H5ANBG6NAMR-VKC
32Gb
2666Mbps
FBGA
H54G36AYRBX257
LPDDR4
1GB
4266Mbps
1.8V / 1.1V / 0.6V
200Ball
CS
H5GC8H24AJR-R2C
GDDR5
8Gb
DDR 3.5GHz
1.35V / 1.35V
MT53D1024M32D4DT-046 WT
MICRON/美光
x32
DDR4-4266
D9WQG
Production
MT54A16G808A00AC-32:A
HBM
HBM2E-3.2Gbps
MT62F512M32D1DS-023 WT:E
LPDRAM
MT62F2G32D4DS-023 WT
LPDDR5
64Gb
Sampling
MT62F1G32D2DS-023 IT
D8CTV
MT62F1G32D2DS-023 WT
D8CTZ
MT62F2G32D4DS-023 IT
D8CTL
MT62F2G32D4DS-023 WT:B
2G x32
4266MHz
0.5V
-25C to +85C
TFBGA
8533MTPS
CL = Programmable
MT62F4G32D8DV-023 IT
128Gb
-40C to +95C
D8CWH
MT62F4G32D8DV-023 WT
D8CWK
MT58K256M32JA-100
GDDR5X
10 Gb/s
1.35V
0C to +95C
FBGA 190-ball
256Mb
Contact Factory
MT62F1G32D2DS-023 WT:B
LPDDR5X
1G x32
0.5v
-25 ~ 85 °C
TFBGA 2000/包
COMPONENT
MT47H32M16NF-25E:H
DDR2
32M x16
400MHz
1.8V
0C to +85C
84-ball TFBGA
512Mb
DDR2 512M X16 TFBGA
MT47H32M16NF-25E IT:H
800MTPS
MT46H32M16LFBF-5 IT:C
LPDDR
D9LQQ
Width: x16
MT47H64M16NF-25E:M
1Gb
64M x16
CL = 5
DDR2 1G X16 TFBGA
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