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DRAM SSD eMMC eMCP FLASH UFS

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model	brand	DRAM type	capacity	framework	speed	working voltage	operation temperature	product details
MT61K512M32KPA-14:B TR	GDDR6	MT61K512M32KPA-14:B TR	GDDR6	美光	16G	512MX32				FBGA	动态随机存取存储器 GDDR6 16G 512MX32 FBGA DDP 制造商美光-Micron	Click view
K4ZAF325BC-SC16	GDDR6	K4ZAF325BC-SC16	GDDR6	SAMSUNG三星	16 Gb	512M x 32	16.0 Gbps			180 FBGA	Mass Production	16K / 32 ms	Click view
K4ZAF325BC-SC20	GDDR6	K4ZAF325BC-SC20	GDDR6	SAMSUNG三星	16 Gb	512M x 32	20.0 Gbps			180 FBGA	Mass Production	16K / 32 ms	Click view
K4ZAF325BM-HC14	GDDR6	K4ZAF325BM-HC14	GDDR6	SAMSUNG三星	16 Gb	512M x 32	14.0 Gbps			180 FBGA	EOL	16K / 32 ms	Click view
K4ZAF325BM-HC18	GDDR6	K4ZAF325BM-HC18	GDDR6	SAMSUNG/三星	16 Gb	512M x 32	18.0 Gbps			180 FBGA	EOL	16K / 32 ms	Click view
H56G42AS4DX014N	GDDR6	H56G42AS4DX014	GDDR6	海力士	16Gb	1.35V / 1.35V	DDR 8.0GHz	FCBGA	CS	Click view
H56G42AS6DX014N	GDDR6	H56G42AS6DX014N	GDDR6	SK HYNIX/海力士	16Gb			1.35V / 1.35V	FCBGA	DDR 9.0GHz	CS	Click view
MT46H32M16LFBF-5 IT:C	LPDDR	MT46H32M16LFBF-5 IT:C	LPDDR	MICRON/美光						D9LQQ				512Mb	Production			Width: x16	Click view
MT46H32M32LFB5-5 IT:B TR	LPDDR	MT46H32M32LFB5-5 IT:B TR	DRAM LPDDR	MICRON/美光	1Gb	32Mx32		1.7V~1.95V	-40℃~85℃	VFBGA-90										Click view
MT46H32M16LFBF-5 IT:C TR	LPDDR	MT46H32M16LFBF-5 IT:C TR	DRAM LPDDR	MICRON/美光	512Mb	32Mx16		1.7V~1.95V	-40℃~85℃	VFBGA-60										Click view
K4EBE304EB-EGCF	LPDDR3	K4EBE304EB-EGCF	DRAM LPDDR3	SAMSUNG/三星	32Gb	x32	1866Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-178	Mass Production									Click view
K4EBE304EC-EGCF	LPDDR3	K4EBE304EC-EGCF	DRAM LPDDR3	SAMSUNG/三星	32Gb	x32	2133Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-178	Mass Production									Click view
K3QF4F40BM-AGCF	LPDDR3	K3QF4F40BM-AGCF	DRAM LPDDR3	SAMSUNG/三星	32Gb	x64	1866Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-253	Mass Production									Click view
MT52L1G32D4PG-107 WT:B	LPDDR3	MT52L1G32D4PG-107 WT:B	DRAM LPDDR3	MICRON/美光	32Gb	x32	1866mb/s	1.8V/1.2V	-30°C~85°C	FBGA-178						D9SSK			1.071ns	Click view
MT52L512M32D2PF-107 WT:B	LPDDR3	MT52L512M32D2PF-107 WT:B	DRAM LPDDR3	MICRON/美光	16Gb	x32	1866mb/s	1.8V/1.2V	-30°C~85°C	FBGA-178						D9SSF			1.071ns	Click view
MT52L256M32D1PF-107 WT:B	LPDDR3	MT52L256M32D1PF-107 WT:B	DRAM LPDDR3	MICRON/美光	8Gb	x32	1866mb/s	1.8V/1.2V	-30°C~85°C	FBGA-178						D9SRZ			1.071ns	Click view
MT52L256M32D1PF-093 WT:B	LPDDR3	MT52L256M32D1PF-093 WT:B	DRAM LPDDR3	MICRON/美光	8Gb	x32		1.2V	-30°C~85°C	FBGA-178										Click view
NT6CL512T32AM-H1	LPDDR3	NT6CL512T32AM-H1	LPDDR3	Nanya/南亚	16Gb	x32	1866Mbps	1.2V	-35C~105C	178-ball BGA					Developing		Commercial		Click view
K4E8E324EB-EGCF	LPDDR3	K4E8E324EB-EGCF	DRAM LPDDR3	SAMSUNG/三星	48Gb	x32	1866Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-178	Mass Production									Click view
NT6CL128M32DM-H1	LPDDR3	NT6CL128M32DM-H1	LPDDR3	Nanya/南亚	4Gb	x32	1866Mbps	1.2V	-30C~105C	178-ball BGA					Developing		Commercial	低power行动DRAM-LPDDR3	Click view