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model

specification

brand

DRAM type

capacity

framework

speed

working voltage

operation temperature

product details

K4EBE304ED-EGCG

LPDDR3

K4EBE304ED-EGCG

DRAM LPDDR3

SAMSUNG/三星

32Gb

x32

2133Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

EOL

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K4EBE304EC-EGCG

LPDDR3

K4EBE304EC-EGCG

DRAM LPDDR3

SAMSUNG/三星

32Gb

x32

2133Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

EOL

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K4E8E324ED-EGCG

LPDDR3

K4E8E324ED-EGCG

DRAM LPDDR3

SAMSUNG/三星

8Gb

x32

2133Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

EOL

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K4E8E324EB-AGCF

LPDDR3

K4E8E324EB-AGCF

DRAM LPDDR3

SAMSUNG/三星

8Gb

256Mx32

1866Mbps

1.8V/1.2V

-25°C~85°C

FBGA-168

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K4E6E304EC-AGCF

LPDDR3

K4E6E304EC-AGCF

DRAM LPDDR3

SAMSUNG/三星

16Gb

x32

1866Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-168

Mass Production

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K4E6E304ED-EGCG

LPDDR3

K4E6E304ED-EGCG

DRAM LPDDR3

SAMSUNG/三星

16Gb

x32

2133Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

EOL

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K4E6E304EC-EGCG

LPDDR3

K4E6E304EC-EGCG

DRAM LPDDR3

SAMSUNG/三星

16Gb

x32

2133Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

EOL

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K4E6E304EB-EGCF

LPDDR3

K4E6E304EB-EGCF

DRAM LPDDR3

SAMSUNG/三星

16Gb

x32

186 Mbps

1.8/1.2/1.2V

-25°C~85°C

FBGA-178

Mass Production

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K4B4G1646E-BYK0

LPDDR3

K4B4G1646E-BYK0

DRAM LPDDR3

SAMSUNG/三星

4Gb

512Mx8

1600Mbps

1.35V

0°C~85°C

FBGA-96

Mass Production

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K4B4G0846E-BYMA

LPDDR3

K4B4G0846E-BYMA

DRAM LPDDR3

SAMSUNG/三星

4Gb

512Mx8

1866Mbps

1.35V

0°C~85°C

FBGA-78

Mass Production

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NT6CL256T32BM-H2

LPDDR3

NT6CL256T32BM-H2

DRAM LPDDR3

NANYA/南亚

8Gb

x32

1600Mbps

1.2V

-25°C~85°C

BGA-178

Mass Production

10.5mm×11.5mm×0.8mm

商业级

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NT6CL256M32AM-H1

LPDDR3

NT6CL256M32AM-H1

DRAM LPDDR3

NANYA/南亚

8Gb

x32

1866Mbps

1.2V

-35°C~105°C

BGA-178

Developing

10.5mm×11.5mm×0.83mm

商业级

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K4E6E304EC-EGCF

LPDDR3

K4E6E304EC-EGCF

DRAM LPDDR3

SAMSUNG/三星

16Gb

512Mx32

1866Mbps

1.8V/1.2V

-25°C~85°C

FBGA-178

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NT6CL512T32AM-H0

LPDDR3

NT6CL512T32AM-H0

DRAM LPDDR3

NANYA/南亚

16Gb

x32

2133Mbps

1.2V

-30°C~105°C

FBGA-178

Developing

10.5mm×11.5mm×0.83mm

商业级

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H9CCNNNCLGALAR-NVD

LPDDR3

H9CCNNNCLGALAR-NVD

DRAM LPDDR3

SK HYNIX/海力士

32Gb

512Mx32

1066MHz

1.2V

BGA

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H9CCNNNBJTALAR-NUD

LPDDR3

H9CCNNNBJTALAR-NUD

DRAM LPDDR3

SK HYNIX/海力士

16GB

512Mx32

1866MHz

1.2V

FBGA-178

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H9CCNNNCLTCLAR-NUM

LPDDR3

H9CCNNNCLTCLAR-NUM

DRAM LPDDR3

SK HYNIX/海力士

32GB

512Mx32

1866MHz

1.2V

FBGA-178

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H9CCNNN8JTBLAR-NUD

LPDDR3

H9CCNNN8JTBLAR-NUD

DRAM LPDDR3

SK HYNIX/海力士

8GB

256Mx32

933Mbps

1.2V

BGA

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K3QF3F30BM-AGCF

LPDDR3

K3QF3F30BM-AGCF

LPDDR3

SAMSUNG/三星

16 Gb

x64

1866 Mbps

1.8 / 1.2 / 1.2 V

-25 ~ 85 °C

253 FBGA

EOL

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K4E8E324EB-EGCG

LPDDR3

K4E8E324EB-EGCG

LPDDR3

SAMSUNG/三星

8 Gb

x32

2133 Mbps

1.8 / 1.2 / 1.2 V

-25 ~ 85 °C

178FBGA

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三代低功耗双倍数据率同步动态随机存储器

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