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model
specification
DRAM type
capacity
framework
speed
working voltage
operation temperature
product details
K9F5608U0D
FLASH
SAMSUNG/三星
32M
x8
2.7V~3.6V
-10°C~125°C
FBGA-63
Click view
K9F2G08U0D-SIB0
2G
256Mx8
2.7v~3.6v
-40°C~85°C
TS0P-48
K4UBE3D4AA-MGCR
DRAM LPDDR4X
32Gb
x32
4266Mbps
1.8/1.1/0.6V
-25°C~85°C
FBGA-200
Sample
K4U6E3S4AA-MGCL
16Gb
Mass Production
K3UH7H70AM-JGCR
64Gb
x64
FBGA-432
K4U8E3S4AD-GFCL
8Gb
-40°C~95°C
K4FBE3D4HM-MGCJ
DRAM DDR4
3733Mbps
1.8/1.1/1.1V
K4F8E3S4HD-GFCL
K4F6E3S4HM-MGCJ
K3UH7H70MM-NGCJ
64 GB
FBGA-366
K4EBE304ED-EGCG
DRAM LPDDR3
2133Mbps
1.8/1.2/1.2V
FBGA-178
EOL
K4EBE304EC-EGCG
K4E8E324ED-EGCG
K4E8E324EB-AGCF
256Mx32
1866Mbps
1.8V/1.2V
FBGA-168
K4E6E304EC-AGCF
K4E6E304ED-EGCG
K4E6E304EC-EGCG
K4E6E304EB-EGCF
186 Mbps
K4B4G1646E-BYK0
4Gb
512Mx8
1600Mbps
1.35V
0°C~85°C
FBGA-96
K4B4G0846E-BYMA
FBGA-78
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