第8页_Branding_Product Center

Branding

Branding

Samsung Hynix Kioxia Micron Nanya SanDisk
Product Category

DRAM SSD eMMC eMCP FLASH UFS

PRODUCT MODEL

For more detailed information, pleaseContact Us ；

model	DRAM type	capacity	framework	speed	working voltage	operation temperature	product details
K4B8G1646D-MYK0	K4B8G1646D-MYK0	DRAM DDR3	SAMSUNG/三星	8Gb	512Mx16	1600Mbps	1.35V	0°C~85°C	FBGA-96	Mass Production					Click view
K4B4G1646E-BCMA	K4B4G1646E-BCMA	DRAM DDR3	SAMSUNG/三星	4Gb	512Mx8	1866Mbps	1.5V	0°C~85°C	FBGA-96	Mass Production					Click view
K4B4G0846E-BCNB	K4B4G0846E-BCNB	DRAM DDR3	SAMSUNG/三星	4GB	512Mx8	2133Mbps	1.5V	0°C~85°C	FBGA-78	Mass Production	2000/REEL				Click view
K4B2G1646F-BYMA	K4B2G1646F-BYMA	DRAM DDR3	SAMSUNG/三星	2Gb	128Mx16	1866 Mbps	1.35V	0°C~85°C	96 FBGA	EOL					Click view
K4B2G1646F-BCNB	K4B2G1646F-BCNB	DRAM DDR3	SAMSUNG/三星	2Gb	128Mx16	2133 Mbps	1.5V	0°C~85°C	FBGA-96	Mass Production					Click view
K4B2G1646F-BCMA	K4B2G1646F-BCMA	DRAM DDR3	SAMSUNG/三星	2Gb	128Mx16	1866 Mbps	1.5V	0°C~85°C	FBGA-96	Mass Production					Click view
K4B2G0846F-BYMA	K4B2G0846F-BYMA	DRAM DDR3	SAMSUNG/三星	2Gb	256Mx8	1866Mbps	1.35V	0°C~85°C	FBGA-78	Mass Production					Click view
K4B1G1646I-BYK0	K4B1G1646I-BYK0	DRAM DDR3	SAMSUNG/三星	1Gb	64Mx16	1600Mbps	1.35V	0°C~85°C	FBGA-96	Mass Production					Click view
K4T1G164QJ-BFF8	K4T1G164QJ-BFF8	DRAM DDR2	SAMSUNG/三星	1Gb	64Mx16	1066Mbps	1.8V	-40°C~95°C	FBGA-84	EOL					Click view
K4T1G084QJ	K4T1G084QJ	DRAM DDR2	SAMSUNG/三星	1Gb	128Mx8	1066Mbps	1.8V	0°C~85°C	FBGA-60	EOL					Click view
K4E6E304EC-EGCF	K4E6E304EC-EGCF	DRAM LPDDR3	SAMSUNG/三星	16Gb	512Mx32	1866Mbps	1.8V/1.2V	-25°C~85°C	FBGA-178						Click view
K4FHE3D4HM-MHCJ	K4FHE3D4HM-MHCJ	DRAM LPDDR4	SAMSUNG/三星	24Gb	x32	3733Mbps	1.8/1.1/1.1V	-40℃~105℃	FBGA-200	EOL					Click view
K4B2G0846F-BCMA	K4B2G0846F-BCMA	DRAM DDR3	SAMSUNG/三星	2Gb	256Mx8	1866Mbps	1.5V	0°C~85°C	FBGA-78	Mass Production					Click view
K4F8E3S4HD-MGCL	K4F8E3S4HD-MGCL	DRAM LPDDR4	SAMSUNG/三星	8Gb	x32	4266Mbps	1.8/1.1/1.1V	-25°C~85°C	FBGA-200	Mass Production					Click view
K4E8E324EB-EGCG	K4E8E324EB-EGCG	DRAM DDR3	SAMSUNG/三星	8Gb	x32	2133Mbps	1.8/1.2/1.2V	-25°C~85°C	FBGA-178	EOL					Click view
K4A4G165WE-BCWE	K4A4G165WE-BCWE	DRAM DDR4	SAMSUNG/三星	4Gb	256M x 16	3200 Mbps	1.2V	0°C~85°C	FBGA-96	Mass Production					Click view
K4UBE3D4AB-MGCL	K4UBE3D4AB-MGCL	DRAM LPDDR4X	SAMSUNG/三星	32Gb	x32	4266Mbps	1.8/1.1/0.6V	-25°C~85°C	FBGA-200	Mass Production					Click view
K4UBE3D4AA-MGCL	K4UBE3D4AA-MGCL	DRAM LPDDR4X	SAMSUNG/三星	32Gb	x32	4266Mbps	1.8/1.1/0.6V	-25°C~85°C	FBGA-200	Mass Production	2000/REEL				Click view
K4U6E3S4AA-MGCR	K4U6E3S4AA-MGCR	DRAM LPDDR4X	SAMSUNG/三星	16Gb	x32	4266Mbps	1.8/1.1/0.6V	-25°C~85°C	FBGA-200	Mass Production					Click view
KLMAG1JETD-B041	KLMAG1JETD-B041	eMMC	SAMSUNG/三星	16GB			1.8~3.3V	-25°C~85°C	FBGA-153	Mass Production	1120/TRAY	11.5mm13mm0.8mm	5.1	HS400	Click view