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model
specification
DRAM type
capacity
framework
speed
working voltage
operation temperature
product details
KLM8G1GETF-B041
eMMC
SAMSUNG/三星
8GB
1.8~3.3V
-25°C~85°C
FBGA-153
Mass Production
1120/TRAY
5.1
HS400
Click view
KLMBG2JETD-B041
32GB
1.8/3.3V
BGA-153
11.5mm x 13mm x 0.8mm
H25G9TCX8CX326A
DRAM
SK HYNIX/海力士
-40°C~125°C
BGA
H9HKNNNFBMAVAR-NEH
DRAM LPDDR4X
x16
4266Mbps
1.8V/1.1V/0.6V
-30℃~105℃
BGA-556
H9CCNNNCLGALAR-NVD
DRAM LPDDR3
32Gb
512Mx32
1066MHz
1.2V
H9CCNNNBJTALAR-NUD
16GB
1866MHz
FBGA-178
H9HCNNNCPUMLXR-NEE
4GB
1.8V/1.1V/1.1V
-25℃~85℃
BGA-200
H9HCNNN4KUMLHR-NLO
256Mx16
3200Mbps
1.1V
-40°C~105°C
FBGA-200
H9CCNNNCLTCLAR-NUM
H9CCNNN8JTBLAR-NUD
256Mx32
933Mbps
H5ANBG6NAMR-XNC
DRAM DDR4
0℃~85℃
FBGA-96
H5ANAG6NCMR-XNC
16Gb
H5TQ2G83GFR-RDC
DRAM DDR3
2Gb
x8
1866Mbps
-0.4V~1.80V
FBGA-78
H5TQ4G63EFR-RDC
4Gb
H5TC4G83EFR-PBA
1600Mbps
H5TC2G83GFR-PBA
DRAM DDR3L
1.283V~1.45V
H5TQ4G63EFR-RDI
-40℃~85℃
H26M41208HPRN
8Gb
3.3V/1.8V
H5TQ4G83EFR-RDC
H28S7Q302BMR
UFS
64GB
1.8V/3.3V
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